Predict etch rates.
With confidence.
A probabilistic etch rate predictor for semiconductor researchers and process engineers. Every result is interval-based, source-cited, and uncertainty-quantified.
The foundation of semiconductor wet processing. Isotropic and anisotropic etch in KOH, TMAH, HF and BHF-based systems. Orientation and doping dependence for silicon. Selectivity pairs for all three material combinations.
ALD and sputtered high-k oxides in dilute HF, BHF, H₃PO₄ and SC-1 systems. Integrated GHS hazard information for all supported etchants, sourced from PubChem. Step-by-step preparation guidance with correct addition order and PPE requirements.
Thin film metallization layers common in MEMS, packaging and interconnect fabrication. Etch rates in standard metal etchants, H₃PO₄:HNO₃:CH₃COOH blends, peroxide and fluoride-based systems. Selectivity relative to underlying dielectrics and silicon.
Compound semiconductors for photonics, RF and power devices. GaAs is now available in early access with H₂SO₄:H₂O₂, HCl:H₂O₂ and citric acid etchants. Photo-assisted etch detection is active: light exposure increases etch rates 5 to 50 times and requires explicit confirmation. InP, GaN and refractory metals follow in the next phase.
Wide-bandgap semiconductors, diffusion barriers, quaternary III/V alloys, transparent conductive oxides and polymer resists. Completes the full wet-etch material stack encountered in compound semiconductor and advanced MEMS processes.
Min/expected/max intervals with confidence scores, derived from multiple literature sources.
Every value traces back to peer-reviewed literature. No black-box numbers.
Etch selectivity between material pairs, directly from the same literature database.
GHS hazard information and preparation guidance for common wet etchants.
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